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Irfb31n20d pdf, irfb31n20d description, irfb31n20d datasheets. Irfb31n20d irfs31n20d irfsl31n20d smps mosfet hexfet power mosfet l high frequency dcdc converters benefits applications l low gatetodrain charge to reduce switching losses l fully characterized capacitance including effective coss to simplify design, see app. Convert your pdf to a highquality jpg image or other image format. All uploaded pdf, converted jpg and zip files are removed after a few hours. Ir8200b international rectifier 3a, 55v dmos hbridge. Power mosfet irfz20, sihfz20 vishay siliconix features extremely low rdson compact plastic package fas st wcthniig low drive current ease of paralleling excellent temperature stability parts per million quality compliant to rohs directive 200295ec description the technology has expanded it s product base to. B, 21mar11 this datasheet is subject to change without notice. There will be no change in fit, form or function, quality or reliability. Product discontinuation notice usa2007 list of 600v legacy igbts being discontinued with recommended replacements. Irfb31n20d integrated circuit specifications for this item unspsc code. Qualification standards can be found on irs web site. Third generation power mosfets from vishay provide the designer with the best combination of fast switching, ruggedized this paper describes the design, development, and performance of a low cost, highefficiency. This device is suitable for use as a load switch or in pwm applications. General description the ao3414 uses advanced trench technology to provide excellent r dson, low gate charge and operation with gate voltages as low as 1.
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